Assessments - 2, GPA: 3.5
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Facilidade de uso
3 mm Benefits • Biasing Control Extends Battery Time • Simple Input and Output Matching • Only One Single Supply Required • No High-side Switching Transistor Required 1. Description 1.1 Process This 5-GHz power amplifier (PA) is designed using Atmel’s Silicon-Germanium (SiGe) process and provides high efficiency. 1.2 Circuitry The PA, ATR7040, consists of a three-stage amplifier with a typical output power of 25 dBm. The output stage was implemented using an open-collector structure. Power up, power down, and output level are controlled at bias control pin 6 (Vctl). 5.8 GHz WDCT Power Amplifier ATR7040 4868C–DECT–05/06 Figure 1-1. Block Diagram VCC1 VCC2 Bias control RFIN 10 RFOUT/VCC3 2 13 15 7 ATR7040 RFOUT/VCC3 3 Matching Matching 6 14 PADDLE VCTL GND GND VCC_CTL ATR7040 4868C–DECT–05/06 ATR7040 2. Pin Configuration Figure 2-1. Pinning QFN16 NC RFOUT/VCC3 RFOUT/VCC3 NC NC NC RFIN NC NCVCC_CTLGNDVCTL NCVCC2VCC1NC 16 15 14 13 5 6 7 8 1 2 3 4 12 11 10 9 GND on the PADDLE ATR7040 Table 2-1. Pin Description Pin Symbol Function 1 NC Not connected(1) 2 RFOUT RF output and supply voltage for output amplifier stage 3 RFOUT RF output and supply voltage for output amplifier stage 4 NC Not connected(1) 5 NC Not connected(1) 6 VCC2 Supply voltage for second amplifier stage 7 VCC1 Supply voltage for first amplifier stage 8 NC Not connected(1) 9 NC Not connected(1) 10 RFIN RF input 11 NC Not connected(1) 12 NC Not connected(1) 13 VCTL Control voltage for power ramping 14 GND Ground 15 VCC_CTL Supply voltage for biasing control block 16 NC Not connected(1) PADDLE – Ground Note: 1. Pin can be connected to paddle for increased GND area 4868C–DECT–05/06 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage VCC 5 V Supply current Icc 400 mA Junction temperature Tj 150 °C Storage temperature TStg –40 to +125 °C Input RF power Pin 10 dBm Control voltage Vctl 2.5 V Note: The part may not survive all maximums applied simultaneously. Electrostatic sensitive device. Observe precautions for handling. 4. Thermal Resistance Parameters Symbol Value Unit Junction ambient package QFN16, 3 . 3, slug soldered on PCB RthJA 40 K/W 5. Operating Range Parameters Symbol Value Unit Supply voltage VCC 2.7 to 3.8 V Operating frequency range fin 5100 to 5900 MHz Ambient temperature range Tamb –25 to +75 °C ATR7040 4868C–DECT–05/06 ATR7040 6. Electrical Characteristics Operating conditions: VCC = 3.6V, Vctl = 1.5V, input frequency = 5.8 GHz, input power 0 dBm, pulsed mode, duty cycle 10%, t= 1 ms, on Tamb = 25°C, unless otherwise specified. No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit 1.0 Frequency range Depends on external circuitry 5100 5900 MHz 1.1 Supply voltage Vcc 2.7 3.6 3.8 V 1.2 Input power Pin 0 dBm 1.3 Saturated power output Psat 25 dBm 1.4 Output power deviation Pd –2 +2 dB 1.5 Control voltage range PA operating mode Vctl 1.0 1.7 V Power-down mode Vctl 0.2 V 1.6 Control input current PA on 5 Ictl 90 .A 1.7 Input return loss With external matching 10 –7 –6 dB 1.8 Isolation Vctl . 0.2V ISOr 33 35 dB 1.9 Power added efficiency At power saturation, Pin =0dBm PAE 35 % 1.10 Current consumption For 25 dBm output power Icc 250 mA 1.11 Current consumption in power-down mode Vctl . 0.2V Icc 1 .A 1.12 Duty cycle of operation At saturated output power 100 % 7. Application Circuit Figure 7-1. Application Circuit C1 8 4 1 2 3 9 12 11 10 7 6 5 13 14 15 16 VCCVCTL VCC slug L1 C3 C6 RFOUT RFIN TRL2 TRL1 C2 4868C–DECT–05/06 8. Diagrams Figure 8-1. Output Power, Efficiency and Supply Currents Versus Input Frequency Pin = 0 dBm, Vcc = 3.6V, Vctl = 1.4V 10 15 20 25 30 35 40 P out (dBm), PAE % 0 50 100 150 200 250 300 350 400 I ges (mA) PAE (%) I ges (mA) Pout (dBm) 5600 5650 5700 5750 5800 5850 5900 5950 6000 Frequency (MHz) Figure 8-2. Output Power, Gain, Efficiency and Supply Currents Versus Input Power Freq = 5800 MHz, Vcc = 3.6V, Vctl = 1.4V 40 400 Pout (dBm), Gain (dB), PAE (%) Pout (dBm) I ges (mA) PAE (%) Gain (dB) -20 -15 -10 -5 0 5 Pin (dBm) 350 300 30 20 Iges (mA) 250 10 200 0 150 -10 100 -20 50 -30 0 Figure 8-3. Output Power, Efficiency and Supply Currents Versus Operating Voltage Freq = 5800 MHz, Pin = 0 dBm, Vctl = 1.5V P out (dBm), PAE (%)I ges (mA) 10 15 20 25 30 35 40 0 50 100 150 200 250 300 350 400 450 PAE (%) Pout (dBm) I ges (mA) 2.5 3.0 3.5 4.0 (V) Vcc ATR7040 4868C–DECT–05/06 ATR7040 9. Ordering Information Extended Type Number Package Remarks ATR7040-PVPG QFN16, 3 . 3 Taped and reeled, MOQ 2000, Pb-free ATR7040-PVQG QFN16, 3 . 3 Taped and reeled, MOQ 8000, Pb-free 10. Package Information 1 4 16 0.25 3 1.7 1613 12 ...